j c/ , u na. 20 stern ave. springfield, new jersey 07081 u s a silicon npn power transistor telephone: (973) 376-2922 (212)227-6005 MJW16010A description ? low collector saturation voltage ? collector-emitter sustaining voltage- : vceo(sus) = 500v(min) wide area of safe operation applications ? designed for high-voltage, high-speed, power switching in inductive circuits where fall time is critical. they are partic- ularly suited for line-operated switchmode applications. typical applications: ? switching regulators ? inverters ? solenoids ? relay drivers ? motor controls ? deflection circuits absolute maximum ratings(ta=25'c) symbol vcev vceo vebo ic icm ib ibm pc tj tstg parameter collector-emittervoltage collector-emitter voltage emitter-base voltage collector current-continuous collector current-peak base current base current-peak collector power dissipation @ tc=25"c junction temperature storage temperature range value 1000 500 6 15 20 10 15 135 150 -55-150 unit v v v a a a a w ?c ?c thermal characteristics symbol rth j-c parameter max thermal resistance, junction to case 0.92 unit ?c/w 1 ' | 1 2 c 2 ?^ 3 pin 1.base 1. collector 3. emitter to-3pn package 1 1 1 1 1 e ? t"~ / -y-,_f ? <^j - '?' dim a b r d e f g h j k l n q r s u c -?- -1 a mm min 19.90 15.50 4.70 0.90 1.90 3.40 2.90 3.20 0.595 20.50 1.90 10.89 4.90 3.35 1.995 5.90 y 9.90 max 20.10 15.70 4.90 1.10 2.10 3.60 3.10 3.40 0.605 20.70 2.10 10.91 5.10 3.45 2.005 6.10 10.10 '.''-, j1) 1 .<* -*rij!'*-l nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however. nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
silicon npn power transistor MJW16010A electrical characteristics tc=25'c unless otherwise specified symbol vceo(sus) vce(sat)-1 vce(sat)-2 vbe(sat) icev icer iebo hfe coe parameter collector-emitter sustaining voltage collector-emitter saturation voltage collector-emitter saturation voltage base-emitter saturation voltage collector cutoff current collector cutoff current emitter cutoff current dc current gain output capacitance conditions lc=100ma;lb=0 lc= 5a; ib= 1a ic=10a;ib=2a lc=10a;lb=2a;tc=10(rc ic=10a;ib=2a lc=10a;lb=2a;tc=100r vcev= 1 0oov;vbe(om= 1 ? 5v vcev=1 ooov;vbe(om=1 .5v;tc=1 00 "c vce= 1000v;rbe= 50 q ;tc=100'c veb= 6v; lc=0 lc=15a;vce=5v ie=o;vgs= 1 0v, ftest= 1 .okhz min 500 5 typ. 8 max 0.7 1.0 1.5 1.5 0.15 1.0 1.0 0.15 400 unit v v v v ma ma ma pf switching times;resistive load(pw= 30 n s; duty cycle:s2%) id tr lstg tf delay time rise time storage time fall time |c=10a;ib1=1.3a;ib2=2.6a; rb2= 1.6 q;vcc= 250v 0.1 0.6 3.0 0.4 u s u s u s u s
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